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PD - 96995A
IRF6646
DirectFETTM Power MOSFET
Typical values (unless otherwise specified)
RoHS compliant containing no lead or bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques
VDSS Qg
tot
VGS Qgd
12nC
RDS(on)
7.6m@ 10V
80V max 20V max 36nC
Vgs(th)
3.8V
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST MQ MX MT MN
DirectFETTM ISOMETRIC
Description
The IRF6646 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6646 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
0.05
Typical RDS(on) ()
Max.
80 20 12 9.6 68 96 230 7.2
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current
12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 10 ID= 7.2A
A
mJ A
0.04 0.03 0.02 0.01 0 4 T J = 25C 6 8 10 12 T J = 125C
ID = 6.2A
VDS= 40V VDS= 16V
14
16
20
30
40
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 2.
QG Total Gate Charge (nC) Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 8.8mH, RG = 25, IAS = 7.2A.
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06/08/05
IRF6646
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance
Min.
80 --- --- 2.8 --- --- --- --- --- 17 --- --- --- --- --- --- ---
---
Typ. Max. Units
--- 0.10 7.6 --- -11 --- --- --- --- --- 36 7.6 2.0 12 14 14 18 1.0 17 20 31 12 2060 480 120 2180 310 --- --- --- --- --- --- --- --- --- --- --- --- --- pF VGS = 0V VDS = 25V ns nC
Conditions
--- --- 9.5 4.8 --- 20 250 100 -100 --- 50 --- ---
VGS = 0V, ID = 250A V V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 12A V mV/C A nA S VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 7.2A VDS = 40V nC VGS = 10V ID = 7.2A See Fig. 17 VDS = 16V, VGS = 0V VDD = 40V, VGS = 10V ID = 7.2A RG=6.2 VDS = VGS, ID = 150A
--- --- --- --- --- --- --- --- ---
= 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 64V, f=1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- 36 48 1.3 54 72 V ns nC --- --- 96
Min.
---
Typ. Max. Units
--- 2.5 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 7.2A, VGS = 0V TJ = 25C, IF = 7.2A, VDD = 40V di/dt = 100A/s
Notes: Pulse width 400s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature. Thermally limited and used Rja to calculate.
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IRF6646
Absolute Maximum Ratings
Parameter
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
Max.
2.8 1.8 89 270 -40 to + 150
Units
W
C
Thermal Resistance
Parameter
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted
Typ.
--- 12.5 20 --- 1.0
Max.
45 --- --- 1.4 ---
Units
C/W
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05 0.02 0.01
J J 1
1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
i (sec)
0.1
0.678449 0.00086 17.29903 0.57756 17.56647 9.470128 8.94 106
1
2
3
4
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
1 10 100
t1 , Rectangular Pulse Duration (sec)
Notes: Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu board (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6646
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V
100
TOP VGS 15V 10V 8.0V 7.0V 6.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
6.0V
BOTTOM
10
6.0V
10
60s PULSE WIDTH
1 0.1 1 Tj = 25C
1
60s PULSE WIDTH
Tj = 150C 0.1 1 10 100
10
100
Fig 4. Typical Output Characteristics
1000
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0 ID = 12A VGS = 10V
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current ()
VDS = 10V 60s PULSE WIDTH 100 T J = 150C 10 T J = 25C T J = -40C
1.5
1.0
1
0.5
0.1 3 4 5 6 7 8 VGS, Gate-to-Source Voltage (V)
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 6. Typical Transfer Characteristics
10000
Fig 7. Normalized On-Resistance vs. Temperature
45 40 35
Typical RDS(on) ( )
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
T J = 25C Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 15V
C, Capacitance(pF)
Ciss 1000
30 25 20 15 10
Coss
Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100
5 0 10 30 50 70 90 110
ID, Drain Current (A)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current
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IRF6646
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100sec
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
1msec
10
1
T J = 150C T J = 25C T J = -40C
1
10msec
0.1
T A = 25C
VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
0.01
T J = 150C
Single Pulse 0.01 0.10 1.00 10.00 100.00
Fig 10. Typical Source-Drain Diode Forward Voltage
14
Typical VGS(th) Gate threshold Voltage (V)
6.0
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
12
ID, Drain Current (A)
10 8 6 4 2 0 25 50 75 100 125 150 T A , Ambient Temperature (C)
5.0
ID ID ID ID
= 150A = 250A = 1.0mA = 1.0A
4.0
3.0
2.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Temperature ( C )
Fig 12. Maximum Drain Current vs. Ambient Temperature
1000
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP
900 800 700 600 500 400 300 200 100 0 25 50 75
3.3A 4.0A BOTTOM 7.2A
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6646
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
RD VDS VGS RG
+
90%
D.U.T.
VDS
- VDD
10%
VGS
td(on) tr td(off) tf
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
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IRF6646
D.U.T
Driver Gate Drive
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
Reverse Recovery Current
P.W.
Period
D=
P.W. Period VGS=10V
*
+
D.U.T. ISD Waveform Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * *
di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFETTM Substrate and PCB Layout, MN Outline (Medium Size Can, N-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
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IRF6646
DirectFETTM Outline Dimension, MN Outline (Medium Size Can, N-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 6.35 A 6.25 5.05 B 4.80 3.95 C 3.85 0.45 D 0.35 0.92 E 0.88 0.82 F 0.78 1.42 G 1.38 0.92 H 0.88 0.52 J 0.48 1.29 K 1.16 2.91 2.74 L 0.70 M 0.59 0.08 N 0.03 0.07 P 0.17 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.034 0.031 0.054 0.034 0.002 0.046 0.109 0.023 0.001 0.007 MAX 0.250 0.201 0.156 0.018 0.036 0.032 0.056 0.036 0.020 0.051 0.115 0.028 0.003 0.003
NOTE: CONTROLLING DIMENSIONS ARE IN MM
DirectFETTM Part Marking
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IRF6646
DirectFETTM Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6646). For 1000 parts on 7" reel, order IRF6646TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MAX MIN MIN CODE MAX MIN MIN MAX MAX N.C 6.9 A 12.992 N.C 330.0 177.77 N.C N.C 0.75 B 0.795 N.C 20.2 19.06 N.C N.C N.C 0.53 C 0.504 0.50 12.8 13.5 0.520 13.2 12.8 0.059 D 0.059 N.C 1.5 1.5 N.C N.C N.C 2.31 E 3.937 N.C 100.0 58.72 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.47 0.488 N.C 12.4 11.9 0.567 14.4 12.01 H 0.47 0.469 N.C 11.9 11.9 0.606 15.4 12.01
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/05
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